Selective polarization mode excitation in InGaAs/GaAs microtubes.
نویسندگان
چکیده
We report on selective polarization mode excitation in InGaAs/GaAs rolled-up microtubes. The microtubes are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from its host GaAs substrate. An optical fiber abrupt taper is used to pick up the microtube, while an adiabatically tapered optical fiber is used to couple light into the resonant optical modes of the microtube. By varying the polarization of the light in the adiabatically tapered fiber both transverse electric and transverse magnetic modes are observed in the microtube. We also show that the microtube can be used as a red (0.6 μm) to infrared light (1.5 μm) optical-optical modulator taking advantage of the thermal-optical effect.
منابع مشابه
Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes
Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-depe...
متن کاملCharacterization of azimuthal and longitudinal modes in rolled-up InGaAs/GaAs microtubes at telecom wavelengths.
We report on theoretical and experimental investigation of azimuthal and longitudinal modes in rolled-up microtubes at telecom wavelengths. These microtubes are fabricated by selectively releasing a coherently strained InGaAs/GaAs bilayer. We apply planar waveguide method and a quasi-potential model to analyze the azimuthal and longitudinal modes in the microtubes near 1550 nm. Then we demonstr...
متن کاملSingle rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides.
We report on single rolled-up microtubes integrated with silicon-on-insulator waveguides. Microtubes with diameters of ~7 μm, wall thicknesses of ~250 nm, and lengths greater than 100 μm are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from the handling GaAs substrate. The microtubes are then transferred from their host substrate to silicon-on-insulato...
متن کاملCoupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots
We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 ± 1.7 μm to 27.5 ± 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing nea...
متن کاملObservation of strain-enhanced electron-spin polarization in photoemission from InGaAs.
Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 pm-thick epitaxial layer of In,Gar-,As with ~~0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy fro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics letters
دوره 36 17 شماره
صفحات -
تاریخ انتشار 2011